Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8161152 | Physica B: Condensed Matter | 2018 | 4 Pages |
Abstract
The electrical properties of alumina films with thicknesses varying from 15Â nm to 150Â nm, grown by the atomic layer deposition technique on n-type Si, were investigated. We demonstrated that the annealing of the alumina layers in argon (Ar) or hydrogen (H) atmosphere at about 700Â K resulted in the introduction of negatively charged defects irrespective of the type of the substrate. These defects were also observed in samples subjected to a dc H plasma treatment at temperatures below 400Â K, whereas they were not detected in as-grown samples and in samples annealed in Ar atmosphere at temperatures below 400Â K. The concentration of these defects increased with a higher H content in the alumina films. In good agreement with theory we assigned these defects to interstitial H-related defects.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Vl. Kolkovsky, R. Stübner,