Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8161450 | Physica B: Condensed Matter | 2018 | 4 Pages |
Abstract
We characterized in-plane magnetic and electrical properties of MnAs/InAs/GaAs(111)B hybrid structure grown by molecular beam epitaxy (MBE). We observed isotropic easy magnetization in two crystallographic in-plane directions, [2Ì
110] and [01Ì
10] of hexagonal MnAs i.e. [1Ì
10] and [112Ì
] of cubic InAs. We also fabricated transmission line model (TLM) devices, and observed almost isotropic electrical properties in two crystallographic in-plane directions, [1Ì
10] and [112Ì
] of cubic InAs. Also we tried to fabricate and characterize lateral spin-valve (LSV) devices from the hybrid structure. We could roughly estimate the spin injection efficiency and the spin diffusion length at room temperature in [112Ì
] direction. We believe that the hybrid structures are helpful to design spintronic device with good flexibility in-plane.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Md. Earul Islam, Masashi Akabori,