Second-order phase transition at high-pressure in GeS crystal

In this paper we give a theoretical proof of the existence of a second-order structural phase transition in the GeS at a pressure of 35.4 GPa. We use the plane-wave pseudopotential approach to the density functional theory in the local density approximation. The evidence of the phase transition is the abrupt change in the bulk modulus as the volume of the unit cell of the crystal changes continuously. We show that the phase transition is caused by the softening of the low-frequency fully symmetric interlayer mode with increasing pressure. As a result, phase transition of a displacement type takes place with the change of translational symmetry of the crystal from the simple orthorhombic to the base-centered orthorhombic (Pbnm(D2h16)→Cmcm(D2h17)).