Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8163084 | Physica B: Condensed Matter | 2013 | 7 Pages |
Abstract
The waiting time between load/initialization and readout of electron spin qubit is related to electron tunneling between the donor and Si/SiO2 interface. Impacts of energy valley interference in silicon, lattice temperature, and screening of metallic gate on the waiting time associated with acoustic-phonon-assisted electron tunneling have been investigated. The results show that interface valley-orbit coupling causes its oscillation with donor depth and the influence of gate screening is significant when the SiO2 thickness is smaller than 10Â nm. Moreover, the influences of these factors are strongest at critical electric field.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Bing-Ping Gou, Peiji Zhao, Xiao-Jun Kong,