The evolution of the band gap energy of the P-rich GaNxP1−x(0<x≤0.05) on composition and temperature

We analyze the evolution of the band gap energy of the P-rich GaNP on composition and temperature by modifying the BAC model. In the modified BAC model, the effects of the composition and the temperature on the parameters in the BAC model are considered. It is found that the coupling constant becomes small after considering the effect of the composition on the N level. It is also found that the temperature dependecnce of the band gap energy becomes large with increasing N content. This is due to two factors. One is that the localized degree of the N states becomes weak with increasing N content. The other one is that the coupling interaction between the N level and the Γ conduction band of GaP becomes large with increasing N content.