Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8163365 | Physica B: Condensed Matter | 2013 | 5 Pages |
Abstract
Al/rubrene/p-Si Schottky diode has been fabricated by forming a rubrene layer on p type Si by using the spin coating method. The frequency dependent capacitance-voltage (C-V-f) and conductance-voltage (G-V-f) characteristics of Al/rubrene/p-Si Schottky diyotes has been investigated in the frequency range of 5Â kHz-500Â kHz at room temperature. The C-V plots show a peak for each frequency. The capacitance of the device decreased with increasing frequency. The decrease in capacitance results from the presence of interface states. The plots of series resistance-voltage (RsâV) gave a peak in the depletion region at all frequencies. The density of interface states (Nss) and relaxation time (Ï) distribution profiles as a function of applied voltage bias have been determined from the C-V and G-V measurements. The values of the Nss and Ï have been calculated in the ranges of 8.37Ã1011-4.85Ã1011Â eVâ1Â cmâ2 and 5.17Ã10â6-1.02Ã10â5Â s, respectively.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Behzad BarıÅ,