Article ID Journal Published Year Pages File Type
8163670 Physica B: Condensed Matter 2013 4 Pages PDF
Abstract
A model for the formation energy of In-N clusters in InxGa1−xNyAs1−y alloys is developed. It is found that when the number of In atoms bonded to one N atom reaches 2.7, the lattice constant in the neighborhood of N atoms matches that of GaAs and the local strain decreases to the minimum. The relationship among the spectral blueshift, the formation energy of one In-N bond, the average number of nearest-neighbor In atoms per N atom, and the nitrogen level is also discussed. It is helpful to further investigate the relationship between the spectral blueshift and the annealing parameters.
Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
Authors
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