Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8164105 | Physica C: Superconductivity and its Applications | 2018 | 5 Pages |
Abstract
A superconducting flux flow transistor (SFFT) with three channels and nanobridges was successfully fabricated by electron beam (e-beam) lithography and an Ar ion milling technique. The SFFT is composed of three weak links with a nearby gate current line. We explain the process to obtain the equation for the current-voltage characteristics and describe the method to induce external and internal magnetic fields by Biot-Savart's law. The equation can be used to predict the current-voltage curves for the 3-channel SFFT fabricated using e-beam lithography. I-V characteristics were simulated to analyze the SFFT with three channels and nanobridges by a Matlab program. From the I-V characteristics equation of the 3-channel SFFT, the drain currents and the output voltages as the gate current is applied are graphically compared with the measured value and the simulation value. The simulated I-V curves were in good agreement with the measured curves of the 3-channel SFFT with nanobridges.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Byunggyu Yu, Young-Pil Kim, Seok-Cheol Ko,