Development, prototyping and characterization of double sided silicon strip detectors

Double sided DC-coupled silicon strip detectors with geometry of 65 mm×65 mm have been developed in India for nuclear physics experiments. The detectors have 64 P+ strips on the front side and 64 N+ strips on the backside with a pitch of 0.9 mm. These detectors were fabricated using a twelve mask layer process involving double sided wafer processing technology. Semiconductor process and device simulations were carried out in order to theoretically estimate the impact of important design and process parameters on the breakdown voltage of detectors. The performance of the first lot of prototype detectors has been studied using static characterization tests and using an alpha source. The characterization results demonstrate that the detectors have low leakage currents and good uniformity over the detector area of about 40 cm2. Overview of the detector design, fabrication process, simulation results and initial characterization results of the detectors are presented in this paper.