Article ID Journal Published Year Pages File Type
8168654 Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 2016 5 Pages PDF
Abstract
A depleted CMOS active pixel sensor (DMAPS) has been developed on a substrate with high resistivity in a high voltage process. High radiation tolerance and high time resolution can be expected because of the charge collection by drift. A prototype of DMAPS was fabricated in a 150 nm process by LFoundry. Two variants of the pixel layout were tested, and the measured depletion depths of the variants are 166 μm and 80 μm. We report the results obtained with the prototype fabricated in this technology.
Related Topics
Physical Sciences and Engineering Physics and Astronomy Instrumentation
Authors
, , , , , , , , , , , , , , , ,