Article ID Journal Published Year Pages File Type
8170606 Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 2016 6 Pages PDF
Abstract
There is a high demand in modern medical applications for dosimetry sensors with a small footprint allowing for unobtrusive or high spatial resolution detectors. To this end we characterize the sensoric response of radiation resistant high mobility AlGaN/GaN semiconductor devices when exposed to β−-emitters. The samples were operated as a floating gate transistor, without a field effect gate electrode, thus excluding any spurious effects from β−-particle interactions with a metallic surface covering. We demonstrate that the source-drain current is modulated in dependence on the kinetic energy of the incident β−-particles. Here, the signal is shown to have a linear dependence on the absorbed energy calculated from Monte Carlo simulations. Additionally, a stable and reproducible sensor performance as a β−-dose monitor is shown for individual radioisotopes. Our experimental findings and the characteristics of the AlGaN/GaN high mobility layered devices indicate their potential for future applications where small sensor size is necessary, like for instance brachytherapy.
Related Topics
Physical Sciences and Engineering Physics and Astronomy Instrumentation
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