Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8171412 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2016 | 5 Pages |
Abstract
Semiconductor scintillators are worth studying because they include both the highest luminosities and shortest decay times of all known scintillators. Moreover, many semiconductors have the heaviest stable elements (Tl, Hg, Pb, and Bi) as a major constituent and a high ion pair yield that is proportional to the energy deposited. We review the scintillation properties of semiconductors activated by native defects, isoelectronic impurities, donors and acceptors with special emphasis on those that have exceptionally high luminosities (e.g. ZnO:Zn; ZnS:Ag, Cl; CdS:Ag, Cl) and those that have ultra-fast decay times (e.g. ZnO:Ga; CdS:In). We discuss underlying mechanisms that are consistent with these properties and the possibilities for achieving (1) 200,000 photons/MeV and 1% fwhm energy resolution for 662Â keVÂ gamma rays, (2) ultra-fast (ns) decay times and coincident resolving times of 30Â ps fwhm for time-of-flight positron emission tomography, and (3) both a high luminosity and an ultra-fast decay time from the same scintillator at cryogenic temperatures.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
Stephen E. Derenzo, Edith Bourret-Courshesne, Gregory Bizarri, Andrew Canning,