Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8172406 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2015 | 4 Pages |
Abstract
The paper reports the 65Â nm CMOS transistors exposed to 3Â MeV protons to study the total ionizing dose (TID) effect and displacement damage (DD). The proton fluence of 7Ã1014Â p/cm2 is equivalent to 9.5Â MGy(SiO2) total dose and 7.7Ã1015Â n/cm2 1Â MeV neutron equivalent fluence. Under this unprecedented hostile environment, we observed that the degradation of 65Â nm CMOS transistors was mainly due to TID effect. Additional results from 10Â keV X-ray irradiation implied no visible DD-induced degradation could be observed even for this extremely high proton fluence.
Keywords
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Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
Lili Ding, Simone Gerardin, Marta Bagatin, Dario Bisello, Serena Mattiazzo, Alessandro Paccagnella,