| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8172411 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2015 | 4 Pages |
Abstract
Silicon material was irradiated with reactor neutrons, which unavoidably created clusters of defects. Spectral photo current measurements in the range from 0.5Â eV up to 1.4Â eV showed accumulation of the signal and long time relaxation behavior in some series of Si (MCZ and FZ) wafers. The proposed differential spectrum analysis method revealed the defects corresponding to strong electron-phonon coupling centers.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
Juozas Vidmantis Vaitkus, Vytautas Rumbauskas, Giedrius Mockevicius, Ernestas Zasinas, Algirdas Mekys,