Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8172427 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2015 | 5 Pages |
Abstract
Miniature micro-strip sensors (â1Ã1 cm2) were irradiated with protons to fluences from 1Ã1012 to 1Ã1015 neq/cm2 and with neutrons from 5Ã1015 to 2Ã1016 neq/cm2 to investigate the reverse current at higher fluences. Precise temperature and current measurements of sensors from Hamamatsu Photonics K.K. (293 μm thick) and Micron Semiconductor Ltd. (143 μm and 108 μm thick) were carried out. The sensors were measured shortly after irradiation and after room temperature annealing. These measurements allow the determination of the evolution of Eeff. Instead of α the geometric current related damage rate αâ is used, which depends on the geometric thickness rather than the depletion depth. For low fluences they are in good agreement while for high fluences αâ is smaller.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
Sven Wonsak, A. Affolder, G. Casse, P. Dervan, I. Tsurin, M. Wormald,