Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8173058 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2015 | 4 Pages |
Abstract
High Electron Mobility Transistors (HEMTs), optimized by CNRS/LPN laboratory for ultra-low noise at a very low temperature, have demonstrated their capacity to be used in place of Si JFETs, when very high input impedance and working temperatures below 100Â K are required. We have developed and tested simple amplifiers based only on this transistor technology, in order to work at a temperature as low as 1Â K or less. They demonstrate at 4.2Â K a typical noise of 1.6Â nV/Hz at 100Â Hz, 0.42Â nV/Hz at 1Â kHz and 0.32Â nV/Hz at 10Â kHz, with a gain of 50 and a power consumption of 1.4Â mW per channel. Two boards have been designed for two different research applications: one for the readout of GMR magnetometers for medical and space applications, the other for search of weakly interacting massive particles (WIMPs) in Edelweiss experiment (HARD project).
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
Xavier de la Broïse, Ayoub Bounab,