Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8173074 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2015 | 4 Pages |
Abstract
High Electron Mobility Transistors (HEMTs), optimized by CNRS/LPN laboratory for ultra-low noise at very low temperature, have demonstrated their capacity to be used in place of Si JFETs when working temperatures below 100 K are required. We associated them with specific SiGe ASICs that we developed, to implement a complete readout channel able to read highly segmented high impedance detectors within a framework of very low thermal dissipation. Our electronics is dimensioned to read 4096 detection channels, of typically 1 MΩ impedance, and performs 32:1 multiplexing and amplifying, dissipating only 6 mW at 2.5 K and 100 mW at 15 K thanks to high impedance commuting of input stage, with a typical noise of 1 nV/âHz at 1 kHz.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
Xavier de la Broïse, Francis Lugiez, Ayoub Bounab, Alain Le Coguie,