| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8174360 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2015 | 5 Pages |
Abstract
Mean and partial cross-section concepts and their connections to multiplicity and statistics of multiple cell upsets (MCUs) in highly-scaled digital memories are introduced and discussed. The important role of the experimental determination of the upset statistics is emphasized. It was found that MCU may lead to quasi-linear dependence of cross-sections on linear energy transfer (LET). A new form of function for interpolation of mean cross-section dependences on LET has been proposed.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
G.I. Zebrev, M.S. Gorbunov, R.G. Useinov, V.V. Emeliyanov, A.I. Ozerov, V.S. Anashin, A.E. Kozyukov, K.S. Zemtsov,