| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8174613 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2015 | 4 Pages |
Abstract
Indium and lead co-doped Cd0.9Zn0.1Te (CZT:(In,Pb)) were characterized by using I-V measurement, thermally stimulated current (TSC) spectroscopy and time-of-flight (TOF). The concentration of doping level of In and Pb was 10 ppm and 2 ppm, respectively. I-V curves showed that CZT:(In,Pb) possessed the resistivity as high as 1.8Ã1010 Ω cm, and the mobility (µ) of about 868 cm2/V s, which is considered acceptable for detector's fabrication. However, the carrier life time (Ï) was only 9.44Ã10â7 s. Therefore, the ÂµÏ (mobility life time product) value was low. TSC results showed thirteen different trap levels, which were much more than that in Indium doped CZT crystal. Several special traps associated with lead were found, which might be the reason for the low carrier life time.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
Yasir Zaman, Wanqi Jie, Tao Wang, Yihui He, Lingyan Xu, Rongrong Guo, Yadong Xu, Gangqiang Zha,