| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8175095 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2014 | 6 Pages |
Abstract
To detect low-dose-rate X-rays, we have developed an X-ray-detecting module for semiconductor diodes. The module consists of a current-voltage (I-V) amplifier, a voltage-voltage (V-V) amplifier, and an alternating-current adopter with a smoothing circuit. The photocurrents flowing through a diode are converted into voltages and amplified using the I-V and V-V amplifiers. To measure relative sensitivities, we used three silicon PIN diodes (Si-PIN), a cerium-doped yttrium aluminum perovskite [YAP(Ce)] crystal, and a Lu2(SiO4)O [LSO] crystal. Three detectors are as follows: an Si-PIN, a YAP(Ce)-Si-PIN, and an LSO-Si-PIN. Using the three detectors, the amplifier output voltages were in proportion to the tube current at a constant tube voltage of 70Â kV. Using a multichannel analyzer, the event-pulse-height spectra were measured to analyze X-ray-electric conversion effect in the three detectors. The output voltage of the Si-PIN was approximately twice as high as those obtained using the YAP(Ce)-Si-PIN and the LSO-Si-PIN at the measurement conditions.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
Shinichi Nihei, Eiichi Sato, Tatsuki Hamaya, Wataru Numahata, Hayato Kogita, Syouta Kami, Yumeka Arakawa, Yasuyuki Oda, Osahiko Hagiwara, Hiroshi Matsukiyo, Akihiro Osawa, Toshiyuki Enomoto, Manabu Watanabe, Shinya Kusachi,