| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8175798 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2014 | 13 Pages |
Abstract
We have investigated the effects of X-ray irradiation to doses of 0, 200Â Gy, 20Â kGy, 2Â MGy, and 20Â MGy on the Hamamatsu silicon-photomultiplier (SiPM) S10362-11-050C. The SiPMs were irradiated without applied bias voltage. From current-voltage, capacitance/conductance-voltage, capacitance/conductance-frequency, pulse-shape, and pulse-area measurements, the SiPM characteristics below and above breakdown voltage were determined. Significant changes of some SiPM parameters are observed. Up to a dose of 20Â kGy the performance of the SiPMs is hardly affected by X-ray radiation damage. For doses of 2 and 20Â MGy the SiPMs operate with hardly any change in gain, but with a significant increase in dark-count rate and cross-talk probability.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
Chen Xu, Robert Klanner, Erika Garutti, Wolf-Lukas Hellweg,