An implantation and β detection system applied in β-decay studies

To study the β decays of nuclei far from the β-stability line, an implantation and β detection system has been implemented at the Peking University. This detection system covers a wide energy range from keV to GeV while maintaining a good energy resolution and a low detection threshold. By correlating the implantation nuclei with their subsequent β-decays within the same pixel or adjacent pixels of a double-sided silicon detector (DSSD), the β decay properties of implanted nuclei can be measured with much less disturbance from other unstable nuclei and the random background.