| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8176966 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2014 | 4 Pages |
Abstract
In this paper, annealing was carried out in air after cutting, polishing and etching to eliminate defects introduced by crystal and wafer preparation work. The effect of annealing temperature and time on the properties of TlBr crystals was investigated. The crystal quality was characterized by infrared (IR) transmittance spectrum, I-V measurement, XRD and energy response spectrum. In the annealing temperature range (100-320 °C) applied, it was found that higher temperature was more effective for improving quality. Furthermore, it is proved that an appropriate annealing time is vital for better crystal quality.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
Zheng Zhiping, Yu Yongtao, Zhou Dongxiang, Gong Shuping, Fu Qiuyun,