Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8178430 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2014 | 4 Pages |
Abstract
Isochronal anneal sequences have been carried out on 3DG112 silicon NPN bipolar junction transistors (BJTs) irradiated with 20Â MeV bromine (Br) heavy ions. The Gummel curve is utilized to characterize the annealing behavior of defects in both the emitter-base depletion region and the neutral base. We find that the base current (IB) decreases with the increasing annealing temperature, while the collector current (IC) remains invariable. The current gain varies slightly, when the annealing temperature (TA) is lower than 400Â K, while varies rapidly at TA<450Â K, and the current gain of the 3DG112 BJT annealing at 700Â K almost restore to that of the pre-radiation transistor. Deep level transient spectroscopy (DLTS) data is used to assign the relative magnitude of each of the important defects. Based on the in situ electrical measurement and DLTS spectra, it is clear that the V2(â/0)+V-P traps are the main contribution to the degradation of current gain after the 20Â MeV Br ions irradiation. The V2(â/0)+V-P peak has many of the characteristics expected for the current gain degradation.
Related Topics
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Authors
Chaoming Liu, Xingji Li, Jianqun Yang, Erming Rui,