The Belle II pixel detector: High precision with low material

In order to be able to fully exploit the increased number of events and provide high precision measurements of the decay vertex of the B meson systems in such a harsh environment, the Belle detector will be upgraded (“Belle II”) and a new silicon vertex detector, based on the DEPFET technology, will be designed and constructed. The new pixel detector, close to the interaction point, will consist on two layers of DEPFET active pixel sensors. This technology combines the detection together with the in-pixel amplification by the integration, on every pixel, of a field effect transistor into a fully depleted silicon bulk. In Belle II, DEPFET sensors thinned down to 75μm with low power consumption and low intrinsic noise will be used.