Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8178701 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2013 | 6 Pages |
Abstract
A systematic experimental study of the main challenges for silicon-pixel sensors at the European XFEL is presented. The high instantaneous density of X-rays and the high repetition rate of the XFEL pulses result in signal distortions due to the plasma effect and in severe radiation damage. The main parameters of X-ray-radiation damage have been determined and their impact on p+n sensors is investigated. These studies form the basis of the optimized design of a pixel-sensor for experimentation at the European XFEL.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
Robert Klanner, Julian Becker, Eckhart Fretwurst, Ioana Pintilie, Thomas Pöhlsen, Joern Schwandt, Jiaguo Zhang,