Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8180049 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2013 | 4 Pages |
Abstract
⺠We explain the high resistivity performance for a CZT:In crystal. ⺠Fermi level is pinned near the mid-gap of SI-CZT:In. ⺠Deep donor level EDD can stabilize the Fermi level deep near the mid-gap. ⺠Origin of EDD level is assigned to TeCd2+ below the conduction band.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
Ruihua Nan, Wanqi Jie, Gangqiang Zha, Hui Yu,