| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8180371 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2013 | 8 Pages |
Abstract
We report on the measurement of the neutron radiation hardness of silicon photomultipliers (SiPMs) manufactured by Hamamatsu Corporation in Japan and SensL in Ireland. Samples from both companies were irradiated by neutrons created by a 1Â GeV electron beam hitting a thin lead target at Jefferson Lab Hall A. More tests regarding the temperature dependence of the neutron radiation damage and self-annealing were performed on Hamamatsu SiPMs using a calibrated Am-Be neutron source from the Jefferson Lab Radiation Control group. As the result of irradiation both dark current and dark rate increase linearly as a function of the 1Â MeV equivalent neutron fluence and a temperature dependent self-annealing effect is observed.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
Yi Qiang, Carl Zorn, Fernando Barbosa, Elton Smith,