Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8180701 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2012 | 4 Pages |
Abstract
The realization of a Silicon Carbon Nanotube heterojuntion opens the door to a new generation of photodetectors (Si-CNT detector) based on the coupling between this two materials. In particular the growth of Multiwall Carbon Nanotubes on the surface of a n-doped silicon substrate results on a Schottky diode junction with precise rectifying characteristics. The obtained device presents a low dark current, high efficiency in the photoresponsivity, high linearity and a wide stability range. The junction barrier is about 3.5Â V in reverse polarity with a breakdown limit at more than 100Â V. The spectral behavior reflects the silicon spectral range with a maximum at about 880Â nm.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
C. Aramo, A. Ambrosio, M. Ambrosio, P. Castrucci, M. Cilmo, M. De Crescenzi, E. Fiandrini, F. Guarino, V. Grossi, E. Nappi, M. Passacantando, G. Pignatel, S. Santucci, M. Scarselli, A. Tinti, A. Valentini,