Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8180742 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2012 | 5 Pages |
Abstract
We have developed a new Compton camera based on silicon (Si) and cadmium telluride (CdTe) semiconductor double-sided strip detectors (DSDs). The camera consists of a 500-μm-thick Si-DSD and four layers of 750-μm-thick CdTe-DSDs all of which have common electrode configuration segmented into 128 strips on each side with pitches of 250μm. In order to realize high angular resolution and to reduce size of the detector system, a stack of DSDs with short stack pitches of 4 mm is utilized to make the camera. Taking advantage of the excellent energy and position resolutions of the semiconductor devices, the camera achieves high angular resolutions of 4.5° at 356 keV and 3.5° at 662 keV. To obtain such high resolutions together with an acceptable detection efficiency, we demonstrate data reduction methods including energy calibration using Compton scattering continuum and depth sensing in the CdTe-DSD. We also discuss imaging capability of the camera and show simultaneous multi-energy imaging.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
Hirokazu Odaka, Yuto Ichinohe, Shin'ichiro Takeda, Taro Fukuyama, Koichi Hagino, Shinya Saito, Tamotsu Sato, Goro Sato, Shin Watanabe, Motohide Kokubun, Tadayuki Takahashi, Mitsutaka Yamaguchi, Takaaki Tanaka, Hiroyasu Tajima, Kazuhiro Nakazawa,