Vacancy-defect scattering in Ag(111)-supported silicene interface

The role of vacancy-defect scattering in electron mobility near the two-dimensional (2D) Ag(111)-supported silicene sheet interface was investigated in this paper. The interface structures of Ag(111)-supported silicene and silicene-sheet charge density were considered. Mobility limited by the vacancy-defect scattering was calculated in the order of 102-105 cm2/V⋅s, which was comparable with first-principle calculations and experimental results for free-standing and substrate-supported silicene. Results further showed the decay relationship between the electron mobility and vacancy density of silicene sheet. Furthermore, the influence of the Ag(111)-supported silicene sheet structure on electron mobility was confirmed through calculations. This study can contribute to the prediction of the electron mobility of other 2D graphene-like honeycomb-structure systems.