Comparative study on transport properties and scattering mechanism of group III doped SiC nanotube

The third group of elements is the acceptor of P-type silicon carbide (SiC). Therefore, studying the transport properties of group III doped SiC nanotube (SiCNTs) and revealing the carrier scattering mechanism have important scientific significance for improving the photoelectric properties and promoting the development of SiC nano-devices. In this article, the lattice structure and transport properties of IIIA-doped SiCNTs are investigated systematically using density functional theory. According to the first principle data, we calculate the temperature characteristics of the conductivity, carrier concentration, and mobility, then, analyze the contributions of optical phonon, ionized impurity, neutral impurity and inter-carrier scattering to the mobility. The calculation results show that the conductivity of IIIA-doped SiCNTs decreased with increasing temperature in the temperature range below 200 K, above 200 K, the conductivity increases with increasing temperature. The main scattering mechanisms are optical phonon scattering and neutral impurity scattering. In application, this results will help the selection of SiCNTs acceptor.