Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8205433 | Physics Letters A | 2014 | 5 Pages |
Abstract
The valence band offsets (ÎEV) of the a-plane non-polar ZnO/Zn1 â xMgxO heterojunctions grown by plasma-assisted molecular beam epitaxy were investigated by X-ray photoelectron spectroscopy. Excluding the strain effect, the ÎEV are determined to be â0.02 eV, â0.02 eV, â0.03 eV, and the related conduction band offsets (ÎEC) are deduced to be 0.06 eV, 0.10 eV, 0.17 eV for x=0.05,0.08and0.13, respectively. The heterojunctions form in the type-I straddling alignment and the Mg composition dependent band alignment is revealed. Our results show important polarity dependence for ZnO/Zn1 â xMgxO heterojunctions. The accurate determination of the band alignment of non-polar ZnO/Zn1 â xMgxO heterojunctions is valuable for designing non-polar ZnO-based optoelectronic devices.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Physics and Astronomy (General)
Authors
W. Chen, X.H. Pan, H.H. Zhang, Z.Z. Ye, P. Ding, S.S. Chen, J.Y. Huang, B. Lu,