Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8206528 | Physics Letters A | 2012 | 5 Pages |
Abstract
⺠We study the elastic and electronic properties of monolayer MoS2 under strain. ⺠The in-plane stiffness and Poissonʼs ratio are revealed. ⺠The band gap undergoes a descent trend as strain increasing. ⺠Direct-to-indirect and semiconductor-to-metal transitions are observed.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Physics and Astronomy (General)
Authors
Qu Yue, Jun Kang, Zhengzheng Shao, Xueao Zhang, Shengli Chang, Guang Wang, Shiqiao Qin, Jingbo Li,