Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
833972 | Materials & Design (1980-2015) | 2005 | 4 Pages |
Abstract
CoSi2 thin films were prepared by radio frequency magnetron sputtering using CoSi2 alloy target. Effect of sputtering input powers on characteristics of CoSi2 thin films was researched by X-ray diffraction (XRD), transparent electron microscope (TEM), energy dispersive X-ray analysis and four points probe, etc. It was shown that the deposition rate increased lineally, the selective sputtering of silicon was strengthened, the (1 1 1) texture increased, and the resistivity decreased when the input powers were increased.
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Authors
F.X. Cheng, C.H. Jiang, J.S. Wu,