| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 838590 | Nonlinear Analysis: Real World Applications | 2010 | 8 Pages |
Abstract
We analyze dopant dynamics in δδ-doped layer of a multilayer structure during growth of an overlayer. We present an explanation of asymmetrization of dopant distribution, which has recently been shown systematically by experiment [A.M. Nazmul, S. Sugahara, M. Tanaka, J. Crystal Growth 251 (2003) 303]. Spreading of a δδ-layer of Mn, sputtered on the structure GaAs/InGaAs/GaAs, have been estimated for overlayer of GaAs.
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Authors
E.L. Pankratov,