Optical effects on the characteristics of a nanoscale SOI MOSFET with uniform doping profile

This paper deals with the effects of optical radiation on a uniformly doped three dimensional nano scale SOI MOSFET including quantum mechanical effects. The model takes into account all the major effects that determine the device characteristics in the illuminated condition. The device characteristics are obtained using self-consistent solution of 3D Poisson–Schrodinger equations using Leibman's iteration method. Calculations were carried out to examine the effect of illumination on the surface potential, current–voltage characteristics, drain to source resistance (Rds), sub threshold characteristics and transconductance (gm). The obtained characteristics are used to examine the performance of the device for its suitable use as a photodetector in opto-electronic integrated circuit (OEIC) receivers.