| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 846389 | Optik - International Journal for Light and Electron Optics | 2014 | 4 Pages |
Abstract
The effects of rapid thermal annealing on the optical properties of InAs/(In)GaAs quantum dots (QDs) with different areal density were investigated by photoluminescence (PL) measurement. The annealing results in PL peak energy blue-shift which strongly depends on QD areal density and capping layer. It is noticeable that low-density QDs and/or InGaAs-capped QDs are more sensitive to the annealing. We attribute the larger energy blue-shift from these samples to enhanced strain-driven diffusion and/or defect-assisted diffusion.
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Authors
Zhan-Guo Li, Ming-hui You, Guo-Jun Liu, Xin Gao, Lin Li, Yong Wang, Lian-He Li,