Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
846489 | Optik - International Journal for Light and Electron Optics | 2016 | 8 Pages |
Abstract
In this work, the electromagnetically induced transparency in a strained GaN/InGaN/AlGaN quantum well system, is theoretically studied. Energy levels and wave functions are calculated using the transfer matrix method. Effects of In and Al compositions, the well and barrier widths on the real and imaginary parts of the optical susceptibility are investigated. Results show that the electromagnetically induced transparency can be controlled via the structural parameters and geometrical size.
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Authors
S. Usefzadeh, M.J. Karimi,