Influence of annealing temperature on In2O3 properties grown by an ultrasonic spray CVD process

This article discusses influence of the annealing temperature on the structural, optical and electrical properties of indium oxide thin films which are prepared on glass substrate heated at 150 °C by ultrasonic spray technique using indium chloride as precursor solution. The deposited samples annealed at 300 °C and 500 °C for 1 h. Structural analysis of these films suggest that the films are polycrystalline with a preferred grain orientation along the (222) plane, and the crystalline state of these films improve with the increase in the annealing temperature from 300 °C to 500 °C. The optical band gap is varied in the range of 3.64–3.73 ev. UV–vis spectroscopy show that the average transmittance is about 85% in the visible region, and the optical transmittance decrease with the increase of the annealing temperature. The electrical resistivity decreases from 80 Ω cm to 9.8 × 10−3 Ω cm with the increase of the annealing temperature from 300 °C to 500 °C.