Silicon nitride deposition using Inductive Coupled Plasma Chemical Vapor Deposition technique to study optoelectronics behavior for solar cell application

Silicon nitride (Si3N4) is one of the promising dielectric materials for electronic devices, since it has extensive variety of applications in the semiconductor industries such as high speed semiconductor devices, solar cells, etc. This paper is mainly focus on comprehensive study of silicon nitride deposition using ICPCVD (Inductive Coupled Plasma Chemical Vapor Deposition) for potential application in the field of c-Si solar cell and on III–V semiconductor based solar cell. It helps to increases the minority carrier lifetime and reduces the reflectance in c-Si solar cell. Deposition parameters like temperature, power and deposition time have been optimized for getting the nitride layer which will be free from trap states.