Effect of temperature on the opto-electrical properties of GaP based light emitting diodes

In this report, we have measured the current – voltage characteristics and the relative light intensity of two different GaP based light emitting diodes (LEDs), namely, L-53HD and L-53GD in a temperature range from 350 K to 110 K and the variation of relative light intensity as a function forward current are measured only at 350 K and 110 K. From the opto-electrical characterizations we obtained the values of the ideality factor, forward voltage and the relative light intensity emitted by the LED at different temperatures. The variations of these data show that temperature has a significant influence on different properties of such LEDs. These results are analysed by their associate theories. Finally, it is important to note that an optimization among the different parameter values, while some increasing and others decreasing with temperature change, as indicated in the present study, is essential and must be considered for design involving the device, particularly, for any low temperature application.