Structural and optoelectronic properties of pulse plated CuIn1−xGaxS2 films

CuIn1−xGaxS2 films were pulse plated at different duty cycles for the first time. The films exhibited single phase chalcopyrite structure. The strain and dislocation density decreased with increase of gallium concentration. The films exhibit p-type conductivity. The grain size of the films increased from 30 to 70 nm with increase of indium concentration. The refractive index decreased from 2.695 to 2.55 with decrease of gallium concentration. The optical band gap of the films increased from 1.60 to 2.275 eV as the gallium concentration increased. The room temperature resistivity decreased from 14.74 to 4.52 Ω cm with decrease of gallium content. The films exhibited linear photocurrent–voltage and photocurrent–illumination characteristics.