One-dimensional nano layered SiC/TiO2 based photonic band gap materials as temperature sensor

In this present paper, we have proposed a novel design of temperature sensor using 1-dimensional photonic band gap materials, which is made by alternate layers of TiO2 and silicon carbide (4H–SiC) with periodic variation of their respective thickness and refractive indices. We have investigated the reflection properties, relative band width behaviour and group velocity of the proposed photonic band gap materials at different temperature. The refractive index of SiC is temperature dependent, so by increasing the temperature the number of forbidden bands as well as width of the forbidden bands increases and the value of group velocity decreases. Thus, by analysing the band gap width, number of forbidden bands, and group velocity, it is easy to calculate the value of temperature of the given environment. This paper is focused on what we regard the latest development in the use of photonic band gap materials in photonic devices, a strong importance with the application in communication. It may be used as a temperature sensor. Our results show the potential application in temperature controlled optoelectronic devices.