| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 849369 | Optik - International Journal for Light and Electron Optics | 2014 | 5 Pages |
Abstract
The electronic structures and optical properties of In doped GaN were calculated with different doping concentration, from first-principles using density function theory with the plane-wave ultrasoft pseudopotential method. The influence of In doping on the volume, interactions among atoms, density of states, electron density difference, and optical properties of GaN was analyzed. The results show that the interactions among atoms are reduced, band gap decreases, and absorption spectra have red shift along with the increase of In doping concentration.
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Authors
Yanjun Ji, Yujie Du, Meishan Wang,