Reflective phase shift measurement of the Mo/Si multilayer mirror in extreme ultraviolet region

The reflective phase shift of multilayer mirror is one important property required in EUV lithography and attosecond pulses experiments. The reflective phase shift of the periodic Mo/Si multilayer mirror was characterized by combining the reflectivity with total electron yield signal at the synchrotron radiation in Hefei. The multilayer was fabricated using direct current magnetic sputtering method. Using the wavelet transform approach, the period and each layer thickness were obtained, the small angle X-ray reflective data from X-ray diffractometer were fitted using these data as the mutilayer's initial structure. The TEY signal of the multilayer is coincided with the surface electron field of the multilayer. A thick Si layer was used to eliminate the effect of the multilayer's surface layer on the TEY signal. The retrieved difference in reflected phase from the incident phase was obtained combining the reflectivity with the total electron yield signal and it is similar with the calculated phase shift of the multilayer.