| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 850707 | Optik - International Journal for Light and Electron Optics | 2013 | 4 Pages |
Abstract
In this paper an ‘all optical NOR gate’ based on four wave mixing in Semiconductor Optical Amplifier is proposed. The performance of this NOR gate is good and satisfactory up to 100 Gbit/s. The extinction ratio and the maximum output power are optimized by appropriate choice of design parameters of SOA and the maximum extinction ratio 10.8 for this design has been obtained at 80 Gbit/s. Unlike the related research papers referred, this paper highlights both power level and time domain analysis of the proposed NOR gate.
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Engineering (General)
Authors
Rekha Mehra, Shikha Jaiswal, H.K. Dixit, Pallavi Singh,