Thermal modeling of GaAs-based semiconductor disk lasers

Thermal characteristics including the temperature, the heat flux, and the temperature gradient of GaAs-based semiconductor disk lasers (SDLs) under various conditions are modeled using the finite element method. The effects of the substrate thickness, the pump spot radius, the heatspreader, and the pump power on the thermal properties of laser are simulated, and the maximum temperature rise in active region is highlighted. Numerical analysis predicts that SiC is an ideal substitute for diamond as a heatspreader. Instead of the sophisticated completely-etched substrate, the use of a high-thermal-conductivity heatspreader along with partly-etched substrate can provide sufficient thermal management to the laser.