Formation mechanism of “memory” phenomenon of microchannel plate image intensifier

A discrete resistance capacitance dynodes chain of channel multiplication model worked in a continuous variable dynode number described here is an attempt to explain the formation mechanism of “memory” phenomenon of microchannel plate image intensifier, wherein it was concluded conclusion that “memory” phenomenon of image intensifiers were the results of a silicon-rich layer, which existed between emission layer and conduction layer of channel inner wall of microchannel plate, having much higher resistance as compared with the conduction layer, and there are two distinct appearance ways of “negative memory” and “positive memory” only due to a difference in illumination and duration of the image intensifier suffered, and a strictly controlled MCP manufacture process would make considerable reduction of “memory” phenomenon occurrence ratio.