Spectroscopic ellipsometry measurements on an anisotropic crystal: 6H-SiC

In spectroscopic ellipsometry (SE) measurement, accuracy of optic axis orientation is very important requirement. To reduce the error arising from the uncertainty in optic axis orientation, we applied multiple angles SE measurement performed on 6H-SiC with the optical axis perpendicular to the sample (0 0 0 1) surface in the 300–800 nm wavelength range at room temperature. The refractive indices and extinction coefficients for ordinary and extraordinary were both fitted by Cauchy dispersion model. The obtained results were of great agreement with literatures.